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In the circuit shown in Fig. current source I is 1.1 mA, and at 25°C vBE = 680 mV at iE = 1 mA. At 25°C with ß=100, what currents flow in R1 and R2
Show that for a transistor with a close to unity, if a changes by a small per-unit amount (?a/a), the corresponding per-unit change in ß is given approximately
For a particular npn transistor operating at a vBE of 680 mV and IC = 1 mA, the iC-vCE characteristic has a slope of 0.8 × 10-5 O
Measurements of the iC-vCE characteristic of a small-signal transistor operating at Vbe = 710 mV show that iC =1.1 mA at vCE =5 V and that iC =1.3
When operated in the active mode, a particular npn BJT conducts a collector current of 1 mA and has Vbe =0.70 Vand iB =10 µA.
Measurements of VBE and two terminal currents taken on a number of npn transistors operating in the active mode are tabulated below
We wish to investigate the operation of the npn transistor in saturation using the model of Fig. Let IS = 10-15 A, vBE = 0.7 V, ß=100, and ISC /IS = 100.
Using the npn transistor model of Fig. 6.5(b), consider the case of a transistor for which the base is connected to ground, the collector is connected to a 5-V
An npn transistor of a type whose ß is specified to range from 50 to 300 is connected in a circuit with emitter grounded, collector at +10 V
Consider an npn transistor operated in the active mode and represented by the model of Fig(d). Let the transistor be connected as indicated by the equivalent
Consider the pnp large-signal model of Fig.(b) applied to a transistor having IS = 10-14 A and ß=50
A pnp transistor modeled with the circuit in Fig.(b) is connected with its base at ground, collector at -2.0 V, and a 1-mA current is injected into its emitter
We contrast two BJT integrated-circuit fabrication technologies: For the "old" technology, a typical npn transistor has IS = 2 × 10-15 A
Consider an npn transistor whose base-emitter drop is 0.76 V at a collector current of 5 mA. What current will it conduct at vBE =0.70 V?
Measurements made on a number of transistors operating in the active mode with iE =1 mA indicate base currents of 10 µA, 20 µA, and 50 µA.
An npn transistor has a CBJ with an area 100 times that of the EBJ. If IS = 10-15 A, find the voltage drop across EBJ and across CBJ when each is forward biased
A pnp transistor has vEB = 0.7 V at a collector current of 1 mA. What do you expect vEB to become at iC = 10 mA? At iC = 100 mA?
A pnp power transistor operates with an emitter-to-collector voltage of 5 V, an emitter current of 5 A, and VEB = 0.8 V. For ß=20, what base current is required
Sketch and clearly label the transfer characteristic of the circuit in Fig. for-15V=vI =+15 V. Assume that the diodes can be represented by the constant
Plot the transfer characteristic of the circuit in Fig. P4.91 by evaluating vI corresponding to vO = 0.5 V, 0.6 V, 0.7 V, 0.8 V, 0 V, -0.5 V, -0.6 V, -0.7 V
In the circuit shown in Fig. the diodes exhibit a 0.7-V drop at 0.1 mA. For inputs over the range of ±5 V, use the diode exponential model
Design limiter circuits using only diodes and 10-kO_ resistors to provide an output signal limited to the range:
Design a two-sided limiting circuit using a resistor, two diodes, and two power supplies to feed a 1-kO load with nominal limiting levels of ± 2.2 V.
A clamped capacitor using an ideal diode with cathode grounded is supplied with a sine wave of 5-V rms. What is the average (dc) value of the resulting output?
The terminal voltages of various npn transistors are measured during operation in their respective circuits with the following results