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If a transistor for which kn is 50% higher is used, what is the resulting percentage increase in ID?
What must Vt be for this device? If a device for which Vt is 0.5 V less is used, what does VS become? What bias current results?
Design for a dc bias current of 0.5 mA and for the largest possible voltage gain (and thus the largest possible RD) consistent
Design the circuit in Figure, so that the transistor operates in saturation with VD biased 1 V from the edge of the triode region
A very useful way to characterize the stability of the bias current ID is to evaluate the sensitivity of ID relative to a particular transistor
Also find the current gain, defined as the ratio of the load current to the current drawn from the signal source
The nominal overall voltage gain is 10 V/V.the change in output voltage is limited to 5% of nominal value; and
and Rout is the output resistance with vsig set to zero. This is different than Ro. Show that
Parameters is most affected by Rf (that is, relative to the case with Rf =8)? For Rsig = 100 kO determine the overall voltage gain,
Find the current I in the circuit below. Your answer may be a function of the voltage supply VS. Clearly show all your work.
Two identical CS amplifiers are connected in cascade. The first stage is fed with a source vsig having a resistance Rsig = 200 kO
If the peak voltage of the sine wave appearing between base and emitter is to be limited to 5 mV, what vˆsig is allowed, and what output voltage signal appears
Two identical CE amplifiers are connected in cascade. The first stage is fed with a source vsig having a resistance Rsig = 10 kO.
A MOSFET connected in the CS configuration has a trans conductance gm = 5 mA/V. When a resistance Rs is connected in the source lead
A CG amplifier using an NMOS transistor for which g m =2 mA/V has a 5-k O drain resistance RD and a 5-kO load resistance RL.
Inclusion of an emitter resistance Re reduces the variability of the gain Gv due to the inevitable wide variance in the value of ß.
Design a CE amplifier with a resistance Re in the emitter to meet the following specifications:
A CE amplifier utilizes a BJT with ß = 100 biased at IC = 0.5 mA and has a collector resistance RC = 12 kO and a resistance Re = 250O connected
The overall voltage gain of a CS amplifier with a resistance Rs = 0.5 kO in the source lead was measured and found to be -10 V/V
A CS amplifier using an NMOS transistor with gm = 2 mA/V is found to have an overall voltage gain of -10 V/V
For the circuit shown in Fig. draw a complete small-signal equivalent circuit utilizing an appropriate T model for the BJT (use a=0.99)
In the circuit shown in Fig the transistor has a ß of 200. What is the dc voltage at the collector?replacing the BJT with one of the hybrid-p models
Consider the augmented hybrid-p model shown in Fig. Disregarding how biasing is to be done, what is the largest possible voltage gain available for a signal
Redesign the circuit of Fig(a) by raising the resistor values by a factor n to increase the resistance seen by the input vi to 75 O
A transistor operating with nominal gm of 40 mA/V has a ß that ranges from 50 to 150. Also, the bias circuit, being less than ideal, allows a ± 20% variation