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A +10.7 µC charge moves from the origin to the point (x, y) = (20.4 cm, 51.5 cm). What was the change in the potential energy of this charge?
I'm asking you to spend a few minutes researching electrical circuit components.
Use the superposition method to determine the value of VO .
Consider the CMOS amplifier analyzed. If vI consists of a dc bias component on which is superimposed a sinusoidal signal, find the value of the dc component
Consider the CMOS amplifier of Fig when fabricated with a process for which k1n = 4k1p = 400 µA/V2, / Vt / 0.5 V, and /VA /=5 V
The NMOS transistor in the circuit of Fig. has Vt = 0.5 V, k1nW/L = 2 mA/V2, and VA= 20 V.
Figure shows an IC MOS amplifier formed by cascading two common-source stages. Assuming that Van = / VAp / and that the biasing current sources
The circuit in Fig. is fabricated in a 0.18-µm CMOS technology for which µnCox = 400 µA/V2, µpCox = 100 µA/V2, Vtn = -Vtp = 0.5 V, V_ An = 5 V/µm
The circuit in Fig. is fabricated in a process for which µnCox =2µpCox =200 µA/V2,V1An =/vap1/ =20 V/µm, Vtn =-Vtp =0.5 V, and VDD =2.5 V.
The MOSFETs in the circuit of Fig. are matched,havingk1n(W/L)1 =k1p(W/L)2 =1 mA/V2 and /Vt / = 0.5 V.
Transistor Q1: in the circuit of Fig. is operating as a CE amplifier with an active load provided by transistor 2 which is the output transistor
It is required to design the CMOS amplifier of Fig. utilizing a 0.18-µm process for which k1n = 387 µA/V2, k1p =86 µA/V2, Vtn =-Vtp =0.5 V, VDD =1.8 V
It is required to design the current source in Fig. to deliver a current of 0.2 mA with an output resistance of 500 kO
Figure shows a current source realized using a current mirror with two matched transistors Q1: and Q2:
In the common-gate amplifier circuit of Fig. Q2: and Q3: are matched. K1n(W/L)n = k1 p(W/L)p = 4 mA/V2, and all transistors have |Vt | = 0.8 V
For the CB amplifier, to explore the variation of the input resistance Rin with the load resistance RL. Specifically, find Rin as a multiple of re for RL/ro
The amplifier is loaded in a resistance RL = 20 kO. Find Rin and io/isig, where io is the current through the load RL
A CG amplifier operating with gm = 2 mA/V and ro =20 kOis fed with a signal source having Rs =1 kO and is loaded in a resistance RL = 20 kO. Find Rin, Rout
Find A0 for an NMO Stransistor fabricated in a CMOS process for which k1 n = 400 µA/V2 and V1 A = 6 V/µm.
What value of load resistance RL causes the input resistance of the CB amplifier to be approximately double the value of re?
Figure shows an amplifier utilizing a current mirrorQ2: Q3: Here Q1:is a common-source amplifier fed with Vi = VGS +vi , where VGS is the gate-to-source
Figure shows a current-mirror circuit prepared for small-signal analysis. Replace the BJTs with their hybrid- p models and find expressions for Rin
It is required to find the incremental (i.e., small-signal) resistance of each of the diode-connected transistors shown in Fig.
Consider the CE amplifiers of Fig. for the case of I =0.5 mA, ß =100, and VA =100 V. Find Rin , Avo, and Ro
For the base-current-compensated mirror of Fig. show that the incremental input resistance (seen by the reference current source) is approximately 2VT /IREF