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Find the required value of (IDRS) and VG to limit ?ID/ID to ± 5%. What value of RS is needed if ID is 100 µA?
Provide a design that biases the transistor at ID =1 mA, with VDS large enough to allow saturation operation
Consider the single-supply bias network shown in Figure. Provide a design using a 9-V supply in which the supply voltage is equally
Find how low ß can be while the value of IC does not fall below that obtained with the design of Problem 7.106 for ß=90.
This can be achieved by connecting a resistor between base and emitter, as shown in Figure Design this circuit for ß = 100.
voltage gain for a high-resistance load is shown in Figure. Find the values of I and RB to bias the BJT at IC =1 mA and VC = 1.5 V. Let ß=100.
Provide a constant current IO as long as the circuit to which the collector is connected maintains the BJT in the active mode. Show that
Assuming all transistors to be identical with ß infinite, derive an expression for the output current IO, and show that by selecting
Calculate the overall voltage gain Gv of a common-source amplifier for which gm = 3 mA/V, ro = 100 kO, RD = 10 kO, and RG = 10MO
MOSFET is operating in saturation with ID =0.5 Ma and VOV =0.3 V. What must the MOSFET's kn be? What is the dc voltage at the drain
Find the largest sinusoid vˆsig that the amplifier can handle while remaining in the saturation region. What is the corresponding signal
Figure shows a scheme for coupling and amplifying a high-frequency pulse signal. The circuit utilizes
Should the transistor be biased for the input resistance Rin to equal that of the signal source? What is the resulting overall voltage gain
If the maximum signal amplitude of the voltage between base and emitter is limited to 10 mV, what are the corresponding amplitudes of vsig and vo
What is the lowest value of IE at which the BJT can be biased? At this bias current, what are the maximum and minimum currents
If a thicker wire has a resistance of 1.0 , what is the resistance of the thinner wire?
Find the open-circuit voltage gain Gv o and the output resistance Rout . Use these values first to verify the value of Gv obtained
Now if transistor ß is specified to lie in the range 50 to 150, find the corresponding range of Rout and Gv .
Find the overall voltage gain when the follower is driven by a 10-kO source and loaded by a 1-kO resistor.
Find expressions for vc/vsig and ve/vsig.If vsig is disconnected from node X, node X is grounded,
If the BJT is biased at IC = 1 mA and the Early voltage is 100 V, provide a better estimate of the voltage gain Gv
If the amplifier remained linear throughout this measurement, what must the values of gm and ro be?
In this problem, we investigate the effect of changing the bias current IC on the overall voltage gain Gv of a CE amplifier
arrange to bias the NMOS transistor at ID = 0.5 mA with VD midway between cutoff and the beginning of triode operation.
what are the extreme values of ID that may result? What value of RS should have been installed to limit the maximum value of ID to 1.5 mA