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Find the device W/L ratios and the value of the resistor that sets the value of IREF so that a nominally 80-µA output current is obtained.
What is the speed of a proton whose kinetic energy is 12.9 keV?
For the current-steering circuit of Figure, find IO in terms of IREF and device W/L ratios
Find the output resistance of the current source Q2: and the output resistance of the current sink Q5:
For each possible input-diode combination, give the values of the output currents and of the VSG that results.
Consider the basic BJT current mirror of Figure when Q1: andQ2: are matched and IREF =1 mA.
It is required to design the circuit to provide an output current IO = 1 mA at VO = 1 V. What values of IREF and R are needed?
Find the voltages at all nodes and the currents through all branches in the circuit of Figure
Using the ideas embodied in Figure, design a multiple-mirror circuit using power supplies of± 5 Vto create source currents of 0.2 mA,
Find the values of gm and ro at the bias point. If terminal Z is grounded, terminal X is connected to a signal source having a resistance
Figure(a) has gm = 10 mA/V and a large ro. Find the open-circuit voltage gain and the output resistance.
Using the topology of Figure, design an amplifier to operate between a 2-kO source and a 2-kO load with a gain vo/vsig of -40 V/V.
Explore the possibility of improvement by reducing the loading of the source by the amplifier input.
What base-to-collector open-circuit voltage gain does your design provide? If Rsig =RL =20 kO, what is the overall voltage gain?
Find the value of RE to establish a dc emitter current of about 0.5 mA.Find RC to establish a dc collector voltage of about +0.5 V.
Determine the dc collector current and dc collector voltage of each transistor.
Find the dc collector current and the dc voltage at the collector.Replacing the transistor by its T model, draw the small-signal equivalent circuit
Find the input resistance Rin and the voltage gain vo/vsig. Assume that the source provides a small signal vsig and that ß=100.
Figure, the BJT used is specified to have ß values in the range\ of 50 to 200 (a distressing situation for the circuit designer).
Find the dc emitter current. Assume ß=100. Neglecting ro, find Rin , the voltage gain vo/vsig, the current gain io/ii , and the output resistance Rout
Repeat (b) for the case when capacitor CB is open-circuited. Compare the results with those obtained in (b) to find the advantages of bootstrapping
If the circuit is fed with a source having a 100-kO resistance, find the transmission to the base of Q1:vb1/vsig.Find the overall voltage gain vo/vsig.
Upon cooling, at what temperature would the first solid appear?What is the first solid phase to appear, and what is its composition?
Calculate the batch composition (in weight percent) necessary to produce a final microstructure that is equimolar in silica and mullite.