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Design the circuit shown in Fig. so that the emitter currents of Q1:Q2:and Q3:are 0.5 mA, 0.5 mA, and 1 mA, respectively
For the circuit in Fig. let VCC =10 V, RC =1 kO, and RB = 10 kO . The BJT has ß=50. Find the value of VBB that results in the transistor operating
The pnp transistor in the circuit in Fig. P6.50 has ß=50. Show that the BJT is operating in the saturation mode and find ß forced and VC.
Consider the operation of the circuit shown in Fig. for VB at -1 V, 0 V and +1 V. Assume that ß is very high. What values of VE and VC result?
For the transistor shown in Fig. assume a˜1 and vBE = 0.5 V at the edge of conduction. What are the values of VE and VC for VB = 0 V?
A single measurement indicates the emitter voltage of the transistor in the circuit of Fig.to be 1.0 V. under the assumption that = 0.7 V, what are VB, IB, IE
In the circuit shown in Fig. the transistor has ß=40. Find the values of VB, VE, and VC. If RB is raised to 100 kO, what voltages result?
A BJT operating at iB = 10 µA and iC = 1.0 mA undergoes a reduction in base current of 1.0 µA.
Design a circuit using a pnp transistor for which a ˜1 using two resistors connected appropriately to ±3 V so that IE = 0.5 mA and VBC = 1 V.
For the circuit in Fig. find VB, VE, and VC for RB = 100 kO, 10 kO, and 1 kO. Let ß=100.
It is required to design the circuit in Fig. P6.63 so that a current of 1 mA is established in the emitter and a voltage of -1 V appears at the collector.
The pnp transistor in the circuit of Fig. has ß=50. Find the value for RC to obtain VC = +2 V.
Consider the circuit shown in Fig. It resembles that in Fig. 6.30 but includes other features. First, note diodes D1 and D2 are included to make design
For the circuit shown in Fig. find the labeled node voltages for:
For the circuits in Fig. assume that the transistors have very large ß. Some measurements have been made on these circuits, with the results indicated
A very simple circuit for measuring ß of an npn transistor is shown in Fig. P6.30. In a particular design, VCC is provided by a 9-V battery
Design the circuit in Fig to establish a current of 0.5 mA in the emitter and a voltage of -0.5 V at the collector.
Design the circuit in Fig.to establish IC = 0.2 mA and VC = 0.5 V. The transistor exhibits vBE of 0.8 V at iC = 1 mA, and ß=100.
For each of the circuits shown in Fig find the emitter, base, and collector voltages and currents. Use ß=50, but assume = 0.8 V independent of current level
Augment the model of the npn BJT shown in Fig(a) by a current source representing ICBO. Assume iE become?
Examination of the table of standard values for resistors with 5% tolerance in Appendix J reveals that the closest values to those found in the design
The current ICBO of a small transistor is measured to be 10 nA at 25°C. If the temperature of the device is raised to 125°C, what do you expect ICBO to become?
A BJT whose emitter current is fixed at 1 mA has a base-emitter voltage of 0.70 V at 25°C. What base-emitter voltage would you expect at 0°C? At100°C?
A particular pnp transistor operating at an emitter current of 0.5 mA at 20°C has an emitter-base voltage of 692 mV.
Consider a transistor for which the base-emitter voltage drop is 0.7 V at 10 mA. What current flows for vBE = 0.5 V?