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If IREF is 20 µA and the transistors are operating at an overdrive voltage of 0.2 V, what IO results? What is the minimum allowable value of VO .
Find the output resistance of the current source Q2: and the output resistance of the current sink Q5.
If ß of the pnp transistor is 50, what is the current gain (or transfer ratio) IO /IREF for the case of identical transistors, neglecting the Early effect?
Why does pore coalescence in a glassy material cause an increase in porosity and negative densification?
A PMOS current mirror consists of three PMOS transistors, one diode connected and two used as current outputs.
Neglecting the effect of finite ß, find the change in IO, both as an absolute value and as a percentage, corresponding to VO changing from 1 V to 10 V.
What is the maximum allowed value of VO while the current source continues to operate properly?
Find the voltages at all nodes and the currents through all branches in the circuit of Figure.
Design a multiple-mirror circuit using power supplies of± 5 Vto create source currents of 0.2 mA, 0.4 mA, and 0.8 mA and sink currents of 0.5 mA, 1 mA, and 2 mA
With Y connected to ground, show that a virtual ground appears at X. Now, if X is connected to a +5-V supply through a 10-kO resistor, what current flows.
Find the small-signal resistance of the diode-connected transistor Q2: in terms of gm2, and hence the total resistance between the drain of Q1: and ground.
Replace the BJTs with their hybrid- p models and find expressions for Rin , io/ii , and Ro, where io is the output short-circuit current.
The open-circuit voltage gain from base to collector is the maximum possible, consistent with the requirement that the collector voltage never fall.
For RL =10 kO, draw the small-signal equivalent circuit of the amplifier and determine its overall voltage gain.
For VCC =15 V, R1 =100 kOR2 =47 kO, RE =3.9 kO, RC = 6.8 kO, and ß=100, determine the dc collector current and dc collector voltage of each transistor.
Replacing the transistor by its T model, draw the small-signal equivalent circuit of the amplifier.
For the emitter-follower circuit shown in Figure the BJT used is specified to have ß values in the range\ of 50 to 200.
If the dc component of vsig is zero, find the dc emitter current.
Replace the BJT with its T model (neglecting ro), and analyze the circuit to determine the input resistance Rin and the voltage gain vo/vsig.
Find the dc emitter currents of Q1: and Q2: Also, find the dc voltages VB1 and VB2.
A CE amplifier has a mid band voltage gain of / AM / =100 V/V, a lower 3-dB frequency of fL =100 Hz, and a higher 3-dB frequency fH =500 kHz.
The Maxwell relations in thermodynamics are obtained by treating a thermodynamic relation as an exact differential equation.
Since a reasonable design should operate for the best transistors for which ß is very high, do your initial design with ß=8.
Find the values of I and RB to bias the BJT at IC =1 mA and VC = 1.5 V. Let ß=100.
What must the relationship of RE to R1 and R2 be? For VCC =10 V and VBE =0.7 V, design the circuit to obtain an output current of 0.5 mA.