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1 describe the basic unit processes involved in ic fabrication and the sequences in which they are performed to yield
1 a random sample of 50 dies is collected from each lot in a given processes calculate the probability that we will
suppose the concentration of particles produced in an etching operation on any given day is normally distributed with a
the time to failure of printed circuit boards is modeled by the following exponential distribution probability density
a new process has been developed for spin coating photoresist ten wafers have been tested with the new process and the
1 assume 100-kev boron implants on a 200-mm silicon wafer at a dose of 5 times 1014 ionscm2 the projected range and
a thin film of silicon dioxide covers a silicon wafer plane light waves of variable wavelengths are incident normal to
1 control charts for r and s are to be maintained for the threshold voltage of short-channel mosfets using sample
assume that 10000 units of a product with area 05 cm2 and 200 chips per wafer are to be produced in three manufacturing
a new product with a critical area of 045 cm2 is to be produced using a technology with a defect density of 05 cm-2
a particle counting device monitors wafers emerging from a plasma etcher from previous experience it is known that the
a fabrication line used for the manufacture of analog ics requires tight control on the relative sizes of small
the following values of saturation drain current idsat were collected from several test wafers with a sample size of n
the and r values for 20 samples of size n 5 are shown below the specification limits of this product are 530-570a
the following data represent temperature measurements from a cvd process the target temperature is 1050 c and the
1 consider a process with micro0 10 and sigma 1 set up 3sigma ewma control charts for lambda 01 02 and 04 discuss
1 consider western electric rule 3 what is the probability of four out of five consecutive points plotting beyond the
a control chart is designed to monitor the threshold voltage of nmos transistors assume that the process is under
suppose that out of a group of 10 coins 9 of them are fair ie they turn up heads 50 of the time one of them is
suppose that you use 200-mm wafers and also assume that you can get functional dies only within the inner 190-mm
an oncoming 150-mm wafer has 10 randomly spaced point defects on it the chip size is 10 cm2 and the final target yield
a manufacturing facility has a yield that is controlled purely by random defects the density of these random defects
to compare two photolithography processes a and b 4 of 8 wafers were randomly assigned to each the electrically
suppose that there are now four photolithography processes to compare a b c and d using 15 wafers the measurements are
a dry-etch step is used to etch 10 microm of polysilicon a sample of five wafers is measured each hour it is expected