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1 drive the mobility formulae and its temperature dependence for a neutral scatterer whose scattering cross section is
1 for a crystal of finite size it is found that there are 100 allowed electron energy levels at the energy e1nbspin the
1 when the boltzmann approximation is valid for computing the electron concentration is it also valid for computing the
what is the error in the boltzmann approximation if the crystal size is not infinite but contains 102 103 104 105 106
1 compute the thermal equilibrium constant k of the electron-hole pair generation-recombination reaction in silicon at
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a homogeneously impurity doped silicon has ndd101x1016nbspphosphorcm3nbspand naanbsp100x1014nbspboroncm3 all of which
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a solar cell panel is attached to the exterior of an orbiting satellite which can be considered a vacuum the panel is
1 extend the considerations of microscopic and macroscopic nonequilibrium and equilibrium of isolated and
a piece of crystalline silicon slice contains an impurity whose concentration is given by nimpurity ax where x is
1 how many intrinsic electrons and holes are there in a thermal de broglie cube at 300k in si corresponding to an
the binding energy of an electron trapped to a sulfur double donor s6nbspin si was measured by prof sah and his
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give the basic physics reason of at least three errors in each of the two bond diagrams of shallow acceptor and donor
connect the boltzmann approximation of the fermi function to the maxwellian velocity distribution function given in
which of the following statements are fundamentally correct and which ones are fundamentally incorrect if taken at
1 in what energy range or above what energy will the boltzmann approximation give less than 1 error a in electron
what is the fraction of the electron states occupied by electrons at an energy of e-ef00455ev at t300k use the very
a pure and very thin si slice is placed inside of and in parallel with a parallel-plate capacitor which has a spatially
compute the bandwidth estimated by the tight-binding model using the tunneling formula let a235a and w10ev what is the
1 sketch the probability density functions of electrons at energies enbspand e-nbspand kpia and sketch also the
1 how many silicon atoms are there for the energy band diagram shown in figure is the number of levels in the
1 draw an energy band diagram especially near the semiconductor-vacuum interface or the semiconductor surface in the
1 at a finite temperature many electron-hole pairs are created due to the thermal vibration of the atomic cores what is