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A transistor with ß = 100 is biased to operate at a dc collector current of 0.5 mA.
For the MOS amplifier of Fig. (a) with VDD = 5 V, Vt = 0.5 V, kn = 10 mA/V2, and RD = 20 kO, determine the coordinates of the active-region .
Find approximate values for the collector voltages and calculate forced ß for each of the transistors.
If the transistor is replaced with another having twice the value of the trans conductance parameter kn, what new value of RD is needed?
Assuming linear operation, what is the maximum allowable negative signal swing at the output? What is the corresponding peak input signal?
Find VOV and VDS for bias point Q at which a voltage gain of -12 V/V is obtained.
What gain value does the combination of these amplitudes imply? By what percentage is this gain value different from the incremental gain value calculated .
Where we have assumed Vt1 = Vt2 = Vt . Thus the circuit functions as a linear amplifier, even for large input signals.
If the process trans conductance parameter k_ n is 200 µA/V2, what is the MOSFET's W/L?
For each, give the maximum possible positive- and negative-output signal swing as determined by the need to keep the transistor in the active region.
What is the peak amplitude of the output sine wave and the value of the gain obtained?
For transistors that saturate at VCE = 0.3 V, what is the largest possible voltage gain achievable with each of these supply voltages?
A BJT amplifier such as that in Figure is to be designed to support relatively undistorted sine-wave output signals of peak amplitudes P volt without the BJT .
What is the output resistance that corresponds to operation at vBE = 710 mV?
If the base current is increased from 10 µA to 12 µA and vCE is increased from 8 V to 10 V, what collector current results? Assume VA = 100 V.
To what value should RB be increased in order for the transistor to operate at the edge of saturation?
For what value of VB is the transistor just at the edge of conduction? (vBE = 0.5 V) What values of VE and VC correspond?
For what value of VB does the transistor cut off? Saturate? In each case, what values of VE and VC result?
Design a circuit using a pnp transistor for which a ? 1 using two resistors connected appropriately to ±3 V so that IE = 0.5 mA and VBC = 1 V.
With RB = 100 kO, what value of ß would return the voltages to the values first calculated?
What is the expected range of collector current and collector voltage corresponding to tfull range of ß values?
Find the value for RC to obtain VC = +2 V. What happens if the transistor is replaced with another having ß=100?
Measurements on the circuits of Figure produce abeled voltages as indicated.
A pnp power transistor operates with an emitter-to-collector voltage of 5 V, an emitter current of 5 A, and VEB = 0.8 V. For ß=20.
What value of ß does a meter reading of full scale correspond? What is ß if the meter reading is 1/5 of full scale? 1/10 of full scale?