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turn off time this is also known as gate controlled turn on time the time interval between a specified point at the
critical rate of rise of current the maximum rate of increase of current during on state which the scr can tolerate
peak inverse voltage peak inverse voltage is important parameter in the design of rectifier circuit piv is the maximum voltage
break over voltage of finger voltage the minimum forward voltage when the gate is opened at which scr starts
critical rate of rise of voltage it depends on the junction temperature higher the junction temperature lower the critical rate
on state voltage drop it is the maximum instantaneous on state voltage measured under pulse conditions to
holding current the holding current is the value of on state current required to maintain conduction once the
thyristor terminology the followings terms are used in scr specificationslatching current the latching current is the value
light triggering when light is thrown on silicon the hole electron pair get excited an increases hence the leakage current of
temperature triggering at high temperature the leakage current of junction j2 increases this leakage current is collector current of tr1
forward voltage triggering if va is increased the collector to emitter voltages of both transistor are also increased hence the
ujt as a relaxation oscillator the ujt is a highly efficient switch it is used as trigger a device for scr no
when both mt2 and gate are negative in this case n3 works as a remote gate current flows form layer p2 to layer n3 junction n1p1 is
when mt2 is negative and g is positive in this case gate current flows through junctions p2n2 electrons are
v- i characteristicswhen the peak value of applied voltage is less than the break over voltage of triac and no signal
triac as the name suggests triac is advice which has three electrodes and works on ac the three terminals of triac
v- i characteristics the operation of the diac can be explained by imagining it as two diodes connected in series when applied voltage in
followings are some disadvantage a higher latching and holding currentbhigher on state voltage drop and power
switching characteristics when a positive signal is applied gto starts conducting before initiation of conduction anode
switching characteristicsthe switching characteristic of an igbt during turn on and turn off time all shown in the sum of
switching characteristics the switching characteristics of power mosfet the delay time and rise time are responsible to remove the effect of
spread time tsduring spread time anode voltage falls from 10 ia to the on state voltage drop and anode
rise time trduring rise time voltage falls from 90 va to 10 where va where va is the initial anode voltage in terms of
delay time td initially a thyristor remains in forward blocking stat when anode to cathode forward voltage is
switching characteristics during turn on a positive gate pulse between gate and cathodeis sufficient to turn on a thyrisotr