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q define transconductancethe control that the gate voltage has over the drain current is measured by the transconductance gfs and is similar to the
q define amplification factor drain resistance and transconductance and derive the relationship between drain resistance and trans conductancedrain
q why fet is a voltage sensitive device explain from the drain characteristicsthe jfet consists of a thin layer of n-type material with two ohmic
q explain the ideal drain characteristics of the jfetthe jfet consists of a thin layer of n-type material with two ohmic contacts the source s and
q show the enhancement of mosfet here also the slab of p type material called the substrate is provided the substrate is connected to a source
q what are the differences between enhancement and depletion mosfetdepletion mosfethere a slab of ptype material is formed from a silicon base and
q what is schokleys equation find out a relation between vgs and idsschokleys equation is used for defining the relation between the gate source
q what is idss what are the conditions for its maximum valuethe term idss refers to saturation condition of the drain current from the above graph
q what do you mean by pinch off voltageas the voltage vds is increased from 0 to a few volts the drain current will increase as determined by
q which are the different fet amplifiersa fet can be used as a small-signal amplifier by connecting one of its lead to signal ground the other two
q what is the advantage of using jfet as an amplifieras an amplifier of small time-varying signals the jfet has a number of valuable assets first of
q give the principle of biasing a fet amplifierto correctly bias the fet the gate needs to be negative with respect to the source bias is obtained in
q on a cd amplifier rs 4k micro 50 and r 35k evaluate the voltage gain av av vovi micrors micro1rs
q which are the three basic configurations of fet amplifiersthe three basic configurations of fet amplifiers aremiddot common sourcecs- it is most
q in a cd amplifiergiven rs 4k micro50 and rd 35k mu find the voltage gain av the voltage gain av vo vi micrors micro1 rs rd 504 103
q what the voltage gains in the fet amplifier for common source voltage gainvovi - micrord rd rdwhere micro is the amplification factorrd the
q compare mosfet with jfeta in enhancement and depletion types of mosfetthe transverse electric field induced across an insulating layer
q explain the construction and operation of enhancement mosfetthe construction of an n-channel enhancement mosfet is shown in figure below two highly
q what is pinch - off voltage the reverse bias is relatively large near the source as a result the depletion region intrudes into the channel near
q what is the voltage controlled resistance region in this region the jfet can actually be employed as a variable resistor whose resistance is
q what is the significance of giving a negative voltage to the gate higher than that of the source this is done to reach the saturation at a lower
q show basic construction of mosfetthe basic construction of the n-channel depletion-type mosfet is provided in figure a slab of p-type material is
q why fet is called a voltage-controlled device why its input resistance is highin the case of a fet the output current id is a function of the
q why we need biasingneed for biasing baising is necessary to establish the quiescent operating point so that the device operates with the linear
q regions of operation in bjt transistor find many applications like amplifier switch etc depending upon the polarity and the magnitude of the