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a jfet for which va 80 v vp 4 v and idss 10 ma has a quiescent drain current of 3 ma when used as a common-source amplifier for which rd rss 1k
explain fet amplifiersjust like the bjt amplifiers fet amplifiers are constructed in common-source cs analogous to ce common-drain cd analogous to cc
explain the working of bjt amplifiersthe purpose of electronic amplifiers is essentially to increase the amplitude and power of a signal so that
given an n-channel enhancement mosfet having vt 4v k 015 av2 idq 05a vdsq 10 v and vdd 20 v using the dc design approach outlined in this
consider and obtain the values for rs r2 r1 and rd apply the rule-of-thumb dc design procedure outlined in this section for a jfet with vp 3v idss
apply the rule-of-thumb dc design presented in this section for a silicon npn bjt with beta 70 when the operating q point is defined by icq 15 ma
q explain about transistor amplifiersamplifiers are circuits that produce an output signal which is larger than but proportional to an input signal
q define integrated circuitsfor the fabrication of semiconductor circuits there are three distinct technologies employed1 discrete-component
an n-channel depletion mosfet for which idss 7ma and vp 4 v is said to be operating in the ohmic region with drain current id 1 ma when vds 08 v
q what is basic working of mosfetthe metal-oxide-semiconductor construction leads to the name mosfet which is also known as insulated-gate fet or
measurements made on the self-biased n-channel jfet shown in figure are vgs -1 v id 4 ma vgs -05v id 625 ma and vdd 15 va determine vp and idssb
q explain emergency repairs to rail fractureemergency repairs - the fractured rails shall be joined by using the arrangements clamps fish plates if
q explain stages of attending to rail fracturevarious stages of attending to rail fracture weld failure in a lwr track in field -equipment required
q explain about junction fetthe jfet is a three-terminal voltage-controlled current device whereas the bjt is principally a three-terminal
q working of field-effect transistorsfield-effect transistors fets may be classified as jfets junction field-effect transistors depletion mosfets
given that a bjt has beta 60 an operating point defined by icq 25 ma and an early voltage va 50 v find the small-signal equivalent circuit
consider the common-emitter bjt circuit shown in figure a the static characteristics of the npn silicon bjt are given in figure b along with the load
q illustrate breakpoint analysiswhen a circuit consists of two or more ideal diodes it will have several distinct operating conditions resulting from
consider a forward-biased diode with a load resistance let the static volt-ampere characteristic of the diode be given by equations and typically
q what is elementary diode circuitssemiconductor diodes are used in a wide variety of applications their usage abounds in communication systems
q design a water supply scheme for a station adopting the following data -asource of water - river flow at a distance of 1 kmbrequirement of water -
q explain a tube wellmethod of restoring or increasing the capacity of tube well is known as developing a tube wells this is done to eliminate
q if it is desired to store english-language writing with 1 byte representing each letter find the minimum number of bits per byte that could be
q the speed of an 8-bit ad converter is limited by the counter which has a maximum speed of 4 times 107 counts per second estimate the maximum number
for the 3-bit 2n -r da converter of figure calculate the analog output voltage when the input is a 100 and b 010solutiona for the binary input 100