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a circuit with a resistor is connected to a DC supply and a Current of 2A and producing a heat. What is the rms Voltage that must be applied by a AC supply to produce 3 times this heat if all other
Let x[n] be a finite sequence that is nonzero for n [N1, N2], and h(n) be a finite sequence that is nonzero n [N3, N4]. Answer the followings: a. For fixed n, what is the range of k that makes h(n-k
A uniform surface charge density of 20 [nC/m^2] is present on the spherical surface r=.6 cm in free space. (a) Find the absolute potential Φ at P(r =1cm,θ=25,φ=50). (b) Find Vab, given
A phosphorus diffusion has a surface concentration of 5 x 10^18/cm^3,and the background concentration of the p type wafer is 1 x 10^15/cm^3.The Dt product for the diffusion is 10^-8 cm^2.
A boron diffusion into a 1 -ohm-cm n type wafer results in a Gaussian profile with a surface concentration of 5 x 10^18/cm^3 and a junction depth of 4um. a)how long did the diffusion take if the dif
Write an MIPS assembly language program to calculate (2* ! N ) where ! is the factorial of a given positive integer N using loop.
Design a synchronous sequential circuit to control the operation of an automatic coffee machine. A cup of coffee costs 15cents and the machine has two input slots. In one slot Only 10cent coins can
A Gaussian beam has a waist of 1.0 mm located 20.0 cm away from a thin converging lens of focal length 10.0 cm. If the wavelength of the source is 633 nm, what is the size and location of the output
Dtermine the resistancevalues for avoltage divider that must meet the following specifications. The currrent drain under the unload condition is nit to exceed 5mA. The soure voltage is to be 10V and
A conical section of material extends from 2.0 cm = r = 9.0 cm for 0 = (theta) = 30° with (permitivity) = 9.0 and (omega) = 0.020 S/m. Conductive plates are placed at each radial end of the sect
Explain three different algebraic methods that can be used to minimize equations. In your explanation write generalized equations to show how each method is used. Notice the requirement is to explai
Consider the impurity diffusion of gallium into a silicon wafer. If gallium is diffused into a silicon wafer (with no previous gallium in it) at a temperature of 1100oC for 3h, what is the depth bel
show that if n=4, a cell can be split into four smaller cells, each with half the radius and 1/16 of the transmitter power of the original cell. If extensive measurements show that the path loss exp
When we shift left we fill in the 0's so that a shift of one left gives x1 = 0110 and x2 = 1110. When we shift right we fill with the sign bit, so that a shift of one right gives x1 = 1011 and x2 =
Design a datapath which inputs three 8-bit unsigned numbers x,y, and z and outputs x - y if x - y > z and outputs x + y otherwise. You may use adders/subtractors, comparators, decoders, and multi
Design a datapath which inputs three 3-bit unsigned numbers x,y, and z. If z is the binary representation for 3 or 7, output x + y. If z is the binary representation of 4 or 6, output x + z. If z is
Determine the equation for steady-state error for K for a unit step input r(t). Consider the three values for k = 1,10, and 100. a)determine steady state error. b)determine and plot the response y(t)
Assume that only input combinations representing 0-9 can occur as inputs, so that combinations 1010 through 1111 are don't cares. Design your circuit using two, three, and four input NAND gates and
A silicon semiconductor at T=300K is homogeneously doped with Nd=5e15 cm^-3 and Na=0. a) determine the thermal equilibrium concentration of free electrons and free holes. B) calculate the drift curr
design your circuit using only two, three, and four input NAND gates and inverters. try to minimize the number of gates and inverters required. the variables A, B, C, AND D will be available from to
Why is V2 and the 2kO resistor included in the KCL equation at node V1. Similarly, why is V1 and the 3kO resistor included in the KCL equation at node V2.
A dielectric material contains 2*10^19 polar molecules/m^3, each of dipole moment 1.8*10^-27 C.m Assuming that all the dipoles are aligned in the direction of the electric field E =10ax V/m, find P
Determine the relative probability of finding the electron at the distance (a) 12 A beyond the barrier, and (b) 48 A beyond the barrier, compared to the probability of finding the incident particle
The solutions to Schrodinger's wave equation for a particular situation is given by Psi(x) = sqrt(2/ao)*e-x/ao. Determine the probability of finding the particle between the following limits: (a) 0&
there are two infinite lines, each carrying uniform charge density and they reside in free space located parralel to the z axis at x = -1 and x =1. determine E at an arbitrary point along the