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magnetized plasma method derive the matrices a and k in the lee and kalluri method equations 1136 using symbolic
a narrow slot through a dielectric derive a narrow slot method for a slot through a material with real r and micror
the narrow slot in tm mode derive the update equations for the narrow slot problem of section 1223 only for the 2d tm
bodies of revolution write a 2d simulation to utilize the bodies of revolution method for a cylindrical waveguide
ferrites with a laplace method similarly derive an fdtd method for ferrites using the laplace transform derivation
magnetized plasma with an ade method the method used in this chapter for ferrites is a type of auxiliary differential
stability of the lee and kalluri method derive the stability of the lee and kalluri method in equations 1137 using the
tfsf method in fdfd similarly the total-field scattered-field formulation is of great importance in the fdfd method
a pml in fdfd because the fdtd method yields a steady-state solution and it cannot be excited by a gaussian source or
the luneberg lens the simulation shown on the cover of this book is known as a luneburg lens the lens is defined by a
fdfd method in 2d repeat problem 99 the system of scatterers with a pml boundary in the fdfd method using the wave
fdfd in cylindrical coordinates derive an fdfd algorithm in 2d cylindrical coordinates starting from the 2d wave
radiation pattern of half-wave dipole use the fdfd method in 2d cylindrical coordinates to model a half-wave dipole
far-field radiation pattern in this problem we will use the code from problem 47 modeling a half-wave dipole antenna
robin boundary condition in fem show that the third-order boundary condition equation 1536b is a statement of the
deriving fdtd from fvtd show that the finite volume method described by equations 1514-1517 collapses to the fdtd
in an electric power plant substation a capacitor bank is made of 10 capacitor strings connected in parallel each
consider the three-input cmos nand circuit in figure assumenbspnbsp 2nbspand vtnnbsp vtp 08 v a if vanbsp vb 5 v
a determine the noise margins of a cmos inverter biased at vddnbsp 33 v with wlnnbsp 2 and wlpnbsp 5 assume vtnbspn 04
repeat problem if the circuit and transistor parameters are vddnbsp 25 v vtnbspnnbsp 035 v vt pnbsp -035 v knnbsp
the cmos inverter in figure 1621 is biased at vddnbsp 33 v let knnbsp kpnbsp vtnbspnnbsp 05 v and vt pnbsp -05 va
repeat problem for the case when the chip contains 5 million cmos inverters being switched at f 8 mhz and the total
a particular ic chip can dissipate 3 w and contains 10 million cmos inverters each inverter is being switched at a
a a cmos digital logic circuit contains the equivalent of 4 million cmos inverters and is biased at vddnbsp 18 v the
a cmos inverter is biased at vddnbsp 33 v the transistor threshold voltages are vtnnbsp 04 v and vtpnbsp -04 v