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zener breakdownzener breakdown takes place in very thin junction ie when both sides of junction layer is narrow when a small reverse bias voltage is
voltage quadrupler a voltage quadrupler circuit is shown in fig which provides output voltage v0 4 vmoperation capacitor c1 c2 and c3 charges to
voltage tripler and quadruplervoltage tripler an extension of the half wave voltage across each diode is 2vm as it is for the filter capacitor
voltage doublerthe network of fig is a half wave voltage doublers during the positive voltage half cycle across the transformer secondary diode d1
ujt as relaxation oscillatorthe ujt relaxation oscillator is shown in fig it consist of a ujt and a capacitor c which is charged through a variable
characteristics of unijunction transistorcharacteristics the static emitter characteristic of ujt at a given inter base voltage vbb in shown in
operation - unijunction transistoroperation imagine that the emitter supply voltage is turned biased and a small emitter reverse current flows then
equivalent circuit the equivalent circuit of a ujt is shown in fig the p - n junction represented in the emitter by a diode silicon bar being
construction - unijunction transistorconstruction the basic structure of uni junction transistor is shown in fig a it essentially consists of a
unijunction transistor abbreviated as ujt also called the double base diode is a 2 layer 3 terminal solid state switching device the device has a
diode circuitsprob a draw the piecewise linear volt ampere characteristic of a p n diode what are the circuit models for the on state and the off
hall effect experimentprob write short note on hall effect and its applications what properties of a semiconductor are determined from a hall effect
properties of a semiconductorwhat properties of a semiconductor are determined from a hall effect experiment sol the hall effect experiment is used
fermi dirac levelsol the fermi level is simply a reference energy level it is the energy level at which the probability of finding an electron n
diffusion current the carrier currents are also due to concentration gradients in the doped material which lead to diffusion of carriers from high
drift current density and conductivityconsider a conductor of length meters and cross sectional area a square meters as shown in fig let the number
drift current and diffusion current there are two mechanisms in which electrons and holes move through a semiconductor one of these is termed as
define diffusion lengthsol diffusion length is defined as the distance travelled by free carriers before recombining it may also be defined as the
number of holes in valence bandderive the expression for number of holes in valence band and fermi level in an intrinsic semiconductorb by that
applications of hall effecti to determine whether semiconductor is of n type or p typeii to determine carrier concentrationiii measurement of
explain hall affect and derive the mathematical expression for hall coefficient also describe its applicationssol hall effectif a metal or
continuity equationexplain continuity equation and discus the special case of continuity equation when concentration is independent of time and with
energy bandthe energy band picture forii an- type and iii ap - type semiconductor indicate the position for the donor and acceptor levelssola fermi
effective negative voltageeffect negative voltage of get when depend upon pitch of voltage the level of that results in id 0 ma is defined by eggs vp
construction and operation of jet jet is a three terminal device one terminal capable of controlling the current between the other two basic