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assignment1 find the oxidation number forp atom in h3po2p atom in h3po3p atom in po42-s atom in h2so4s atom in so32-cr
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an experiment involves heating a very small sphere that is suspended by a fine string in air with a laser beam in order
naturally occurring element x exists in three isotopic forms x-28 27977 amu 9221abundance x-29 28976 amu 470 abundance
ask comparison between caulometry and electrogravimetry question minimum 100
an unknown metal reacts with sulfur to form an unknown compound m2s3 if 312grams of m reacts with 288gramsof s what is
the cathode center and anode chambers of an electrolytic cell contain each 10 milliequivalents of hcl in aqueous
1 a silicon sample is oxidized in dry o2 at 1200 c for one houra what is the thickness of the oxide grownb how much
1 list the input and output parameters of a typical semiconductor manufacturing process2 what were the key milestones
1 describe the basic unit processes involved in ic fabrication and the sequences in which they are performed to yield
1 a random sample of 50 dies is collected from each lot in a given processes calculate the probability that we will
suppose the concentration of particles produced in an etching operation on any given day is normally distributed with a
the time to failure of printed circuit boards is modeled by the following exponential distribution probability density
a new process has been developed for spin coating photoresist ten wafers have been tested with the new process and the
1 assume 100-kev boron implants on a 200-mm silicon wafer at a dose of 5 times 1014 ionscm2 the projected range and
a thin film of silicon dioxide covers a silicon wafer plane light waves of variable wavelengths are incident normal to
1 control charts for r and s are to be maintained for the threshold voltage of short-channel mosfets using sample
assume that 10000 units of a product with area 05 cm2 and 200 chips per wafer are to be produced in three manufacturing
a new product with a critical area of 045 cm2 is to be produced using a technology with a defect density of 05 cm-2
a particle counting device monitors wafers emerging from a plasma etcher from previous experience it is known that the
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the following values of saturation drain current idsat were collected from several test wafers with a sample size of n
the and r values for 20 samples of size n 5 are shown below the specification limits of this product are 530-570a
the following data represent temperature measurements from a cvd process the target temperature is 1050 c and the
1 consider a process with micro0 10 and sigma 1 set up 3sigma ewma control charts for lambda 01 02 and 04 discuss