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what is the simplest formula of a compound if a sample of the compound contains 0298mol x 1192mol y and 2682mol
what mass of oxygen gas is required for the complete combustion of 612g of propane c3h8 to produce co2nbspand
among the solubility rules previously discussed is the statement carbonates phosphates borates and arsenates-except
calcium phosphide is used to make fireworks write a conversion factor that converts between moles of calcium ions in
what is your favorite holiday food or beverage list its ingredients write the molecular formula for each of the top 5
it is official the last four synthetic elements of the periodic table have names what are they and for whom are each
uranium is distributed in a form called yellow cake which is made from uranium ore in the second step of the reactions
what is the name of the value that can be calculated that expresses with a number how precise and how accurate each
chemistryconh36cl3nbspcan be synthesised from cobaltii chloride according to the following reaction2cocl2sdot6h2os 2
combustion of hydrogen releases 142 kjgram of hydrogen reacted how many kcal of energy are released by the combustion
anbspcalculate deltasdeg for thenbspfollowing reaction2 ch3ohg 3 o2g rarr 2 co2g 4 h2ogbnbspuse the following data to
predict the valence electron molecular orbital configurations for the following and state whether they will be stable
two important industrial chemicals ethane c2h4 and propane c3h6 are produced by the steam or thermal cracking
a for an electron mobility of 500 cm2nmiddots calculate the time between collisions ta ke mil moin these calculationsb
equation can be interpreted this way the minority carriers that are thermally generated within the diffusion length
the forward-bias voltage v required to maintain a pn diode current i is a function of the temperature ta derive an
a gaas mesfet has a 02 microm thick n-channel doped to nd 1017 cm-3 assume thatc can any gate voltage of the opposite
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consider a conventional npn bjt with uniform doping the base-emitter junction is forward biased and the base-collector
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an nmosfet with a threshold voltage of 05 v and oxide thickness of 6 nm has a v dsat of 075 v when biased at vg 25 v
p-channel mosfet with heavily doped p-type poly-si gate has a threshold voltage of -i s y with v sb 0 v when a 5 v
answer the following questionsa in an older mosfet technology the field oxide is a 1 m thick thennal oxide would you
answer each of the following questions in one to three sentencesa what is lithography fieldb what is misalignment in
for the following process steps assume that you use a positive photoresist and that etch selectivity is infinite a