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calculate the mean free path of a particle in the gas phase of a deposition systemand estimate the number of collisions
in an epitaxial deposition under mass transfer limited conditions is it more important to control the reactor
in a reactor used for epitaxial growth the wafers are normally placed flat on the susceptor and epi grows on the top
for cvd deposition of a film it is found that the mass transfer coefficient hg 10 cm sec-1 and the surface reaction
a using schematic diagrams show qualitatively how changing the gas pressure in a standard pvd system using an
how does the ability to fill the bottom of a narrow trench using sputter deposition change as the target is moved
explain how asymmetric depositions can occur on a wafer in a sputter deposition systemasymmetric deposition means that
what value of n in the arrival angle distribution is desired for good step coverage over a step in topography for good
we have seen how conformal coverage in low pressure systems results from a low sticking coefficient which causes
why might pure chemical etching such as in wet etching be adequate for patterning the silicon nitride layer used to
if the etch anisotropy is 0 what is the undercut or etch bias when etching a 05-pm thick film what is the undercut when
in a certain process it is desired that the pitch of metal lines be equal to or less than 10 microm the pitch equals
what are the advantages and disadvantages of reactive ion etching versus sputter etchingcite a hypothetical example of
it is found that a certain plasma etch chemistry in a certain rie etch system pro-duces vertical sidewalls with zero
what would you expect would happen to the threshold voltage of a mos transistor if the gate oxide were deposited
a 1 x 1014 cm-2 phosphorus implant through a 200-nm sio2 mask layer is performed so the peak concentration is at the
phosphorus is implanted at 50 kev with a dose of 1 x 1014 cm-2calculate the junction depth where the phosphorus meets
in the ion implantation process positively charged ions impact on the semiconductor surface normally these ions are
an amorphizing implant is performed using a high dose of arsenic 5 x 105 cm-2 200 kev and tem cross-section images
calculate the change in junction depth for a 40-key boron threshold adjust implant of 5 x 1013 cm-2 annealed at 750degc
the diffusion of a buried antimony layer is only 20 of its normal diffusion in an inert ambient after a phosphorus
a phosphorus implant is performed into a bare p-type silicon wafer with a back-ground doping of 1 x 1015 cm-3 at an
arsenic is implanted into a lightly doped p-type si substrate at an energy of 75 kev the dose is 1 x 1014 cm-2 the si
question - what is the process of chylomicrons turning into hdl ldl and vldl i think that hdl has a particularly
questions -1 for 1opf how would the removal of residues 114-131 affect solute selectivity assuming that the removal did