Problem
Silicon wet etch rate in 25% KOH at 90 oC has been measured to be 2.5µm/min, and the activation energy was determined to be 0.61 eV (59 kJ/mol). If 340µm deep structures need to be etched and the etch bath temperature is controlled to ±1 oC, what uncertainty does this introduce in the etch time?
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.