Problem
1. The CVD oxide process is designed to target 500 nm thickness. If the wafers are violet, and the violet changes to pink on wafer edges, what is repeatability and uniformity of this deposition process?
2. If silane (SiH4) flow in a single-wafer (150 mm) PECVD reactor is 5 sccm (cm3 /min), what is the theoretical maximum deposition rate of amorphous silicon?
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.