Problem
1. Holes are etched in 1 µm thick thermal oxide. The wafer is then given 1 h wet oxidation at 1000 oC. All oxide is then etched away. What is the resulting step height in silicon?
2. 250 min wet oxidation results in 1µm thick oxide. How long will it take to grow 10µm thick oxide under the same conditions? How long will it take to grow a 0.1 µm thick oxide?
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.