Problem
1. It is desired to implant phosphorus into silicon through 0.1µm of silicon dioxide. Select an implant energy to place the peak implanted concentration at the oxide-silicon interface.
2. What mask feature size is required to produce a 400µm diaphragm of thickness on a silicon wafer that is 510µm thick? What is the edge-length variation for the diaphragm if the actual wafer thickness for different wafers varies between 490 and 510µm Assuming that the sensitivity of a pressure sensor varies as the inverse fourth power of the diaphragm edge length, what percentage variation in sensitivity can be attributed to variations in wafer thickness?
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.