Problem
A 30-stack quarter-wavelength Bragg reflector is used in making a 660-nm bright-red light emitting diode (LED) on a GaAs substrate. For the stack layers, GaAs (refractive index 3.5) and Al4Ga0.6As (refractive index 3.2) are used.
• What are the thicknesses of the GaAs and Al4Ga0.6As layers in each stack?
• Calculate the reflectivity of the stack for 660-nm LED emission.
• What is the bandwidth of the reflected beams in nm?
The response must include a reference list. Using Times New Roman 12 pnt font, double-space, one-inch margins, and APA style of writing and citations.