A silicon semiconductor resistor is in the shape of a rectangular bar with a cross sectional area of 1x10^-6 cm^2 a length of 0.1 cm and is doped with a donor concentration of 5x10^16 cm^-3.
(a) Calculate the resistance of this resistor at 300K. The mobility is 1100 cm^2/Vs (0.4 point)
(b) Calculate the current in the resistor if a bias of 5 volt is applied across the length of the device.
(c) What is the average electron drift velocity? (Hint E = V/L)