If the A1/n-Si Schottky barrier contact shown in given Figure was used as the ohmic contact to the n-Si surface of the 1957SNS p+/n diode, how would the forward I-V characteristics look?
Sketch it both on linear-linear and semi-log paper by reading off a few important points from the two forward curves in given Figure. Are the reverse characteristics affected? What can you conclude from this exercise - what can an experimental I-V curve reveal about the processing and design difficulties?
