1. Show by elementary integration that the net steady-state volume generation-recombination rate of electrons (or holes) in a volume element dxdydz is given by the net electron current flowing out of the volume element.
2. Given Vn(x)=Vn(0) + [VN(L)-VN(0)](x/L)2 which is measured in an n-type Si sample, what are the electron and hole generation-recombination rates as a function of x to give this current in the 1-d n-Si bar in problem?
Problem :-
A current of I A is forced through a homogeneous n-type 1 ohm-cm Si bar of cross-sectional area of 1mm2. What is the quasi-Fermi electric field of electrons in the Si bar? What is the quasi-Fermi electric field of holes in the Si bar?
What are the electron and hole quasi-Fermi potential differences between the two ends of the bar of 1cm? What is the applied voltage across the 1cm bar? Are your answers consistent?