We want to design an implant step which will implant phosphorus ions through. 50 nm of SiO2 into an underlying silicon substrate such that the peak concentration in, the substrate is 1 x 1017 cm-3 and the concentration at the SiO2/Si interface is 1 X 1015 cm-3.
What energy and dose would you use to achieve these conditions?
Assume that the stopping power of SiO2 is the same as that of silicon. Neglect channeling effects.