A SiO2 layer is deposited by LPCVD over a single 1-nm-wide. 0.5-p.m-high metal line.
The deposition flux and time are such that 0.25 µm of SiO2 would be deposited on a flat surface.
The sticking coefficient for this process is 0.01 and the arrival angle distribution parameter n is equal to 1.
Very conformal deposition is obtained, but the DOP is 0. Would changing it or Sr improve (increase) the DOP? Explain.