We wish to estimate the d-c power dissipated in a GaAs Gunn diode. Assume that the diode is 5 jxm long and operates in the stable domain mode.
(a) What is the minimum electron concentration n0l What is the time between current pulses?
(b) Using data from Fig. 10-9a, calculate the power dissipated in the sample per unit volume when it is biased just below threshold if rc0 is chosen from the calculation of part (a). In general, does operation at a higher frequency result in greater power dissipation?
