Use Mat lab to charge neutrality equation in order to plot the Fermi level as a function of doping vs. temperature for Si, GaAs, SiC, and GaN. Using Phosphorous as a donor dopant at 1e18, 1e16, 1e14, and 1e12 for each material above, generate plots determining the temperature at which the Fermi level is equal to the intrinsic Fermi level for each doping concentration. Remember that the Intrinsic Fermi level is also a function of temperature.