It is required to design the circuit of Fig. to provide a bias current IREF of 225 μA with Q8 and Q9 as matched devices having W/L = 60/0.5. Transistors Q10, Q11, and Q13 are to be identical and must have the same gm as Q8 and Q9. Transistor Q12 is to be four times as wide as Q13. Let k1n =3k1p =180 μA/V2, and Vtn |Vtp |= 0.5 V; let all hannel lengths be equal; and let VDD =VSS =1.5 V. Find the required value of RB. What is the voltage drop across RB? Also specify the W/L ratios of Q10, Q11, Q12, and Q13 and give theexpected dc voltages at the gates of Q12, Q10, and Q8.
