To determine the relationship between the drain current id

Question

Lab: MOSFET Transistor Current-Voltage Characteristics

Objective:

To study the transfer characteristics of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) through laboratory experimentation.

Pre-Lab:

Acquire the necessary parts to perform the experiment.Note the instructor will supply the MOSFET.

List of Parts:

1. Obtain a CD4007 integrated circuit from the instructor.

2. Resistor; 1KW

Procedure:

1) To determine the relationship between the drain current I_D and the gate-source voltage V_GS for an N-Channel MOSFET,construct the circuit in Figure 1, using a 1K resistor.Connect pin 14 to 10V and pin 7 (the body) to 0V.Apply a sinusoidal waveform varying from 0 to 5V with a frequency of roughly 1kHzto Vin so that Vin is swept from 0 to 5V. Take measurements to form a plot of ID vs Vgs. From this curve determine VTN.

2) To determine the relationship between the drain current I_D and the drain-source voltage, V_DS, for an N-Channel MOSFET, connect the circuit in Figure 2 using the MOSFET and a 1Kohm resistor. Connect pin 14 to 10V and pin 7 (the body) to 0V.Adjust the gate-source voltage to VTN + 1V.Vary V_in from 0 to 10V using a function generator (~1kHz again).Take measurements to plot ID vs Vds.

3) Repeat Step #2 for additional values of V_GS = V_TH + 1.25V, V_GS = V_TH + 1.5V, V_GS = V_TH + 1.75V, V_GS = V_TH + 2V(You should have 5 traces, including those from step 2)