For the following process steps.. assume that you use a positive photoresist and that etch selectivity is infinite. A composite plot of four photo masks is given in Fig. 3- 26. Assume that mask alignment is perfect. All contact sizes are 0.5 x 0.5 µm. The poly 1 and poly 2 areas are opaque. and the contact I and contact 2 areas are clear in the masks. Draw the cross section at the end of each process step along the cut line shown in the figure
