A Si p-n junction with a cross sectional area of 10^-4 cm^2 has the following properties at T=300 K: Dn=25cm^2/sec, Dp=10cm^2/sec, ni = 9.65x10^9cm^-3,
tp = tn=5x10^-7sec, er =11.9
a) Design the diode such that the electron and hole diffusion currents are Jn=10A/cm2 and Jp = 1A/cm2 at forward bias voltage of 0.65V.
b) Consider that the operating temperature of the diode in part (a) is changed to 310K. Estimate the change in currents. (You need to consider here parameters that depend on temperature. Assume D and t are independent of T.)
c) The p-n junction in part (a) is used as a capacitor in an LC circuit to tune two WHRO stations in your car radio. When no voltage is applied a radio station transmitting at 89.5 MHz is received. What is the voltage required to get the classical music station at 90.3 MHz?