The doping level of n-type semiconductor is nd 519 cm-3, Electrical Engineering

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The doping level of n-type semiconductor is nd 519 cm-3

The doping level of N-type semiconductor is Nd= 5^19 cm^-3. Determine the room tempature position of the Fermi level ( with respect to the bottom of the comduction band) if the semiconductor is
A). Si (Nc=2.86^19cm^-3)
B). GaAs (Nc=7^18 cm^-3)
What would be the relative error ( expressed in percent) if the Maxwell-Boltzmann distribution was assumed?

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Electrical Engineering: The doping level of n-type semiconductor is nd 519 cm-3

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Electrical Engineering: The doping level of n-type semiconductor is nd 519 cm-3

Reference No:- TGS0606298

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Electrical Engineering: The doping level of n-type semiconductor is nd 519 cm-3

Reference No:- TGS0606298

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