The current of an ideal p-n junction under illumination can be described by:
J(V)=J0(eqVkT-1)-Jph
where J0 is the saturation-current density, Q the elementary charge, V the voltage, K the Boltzmann's constant,T the temperature and JPH the photo-current density.
A crystalline silicon cell generates a photo-current density of JPH= 35 MA/cm2 at T=300k. The saturation-current density is J0=1.95*10^-10 MA/cm2
Assuming that the cell behaves as an ideal p-n junction, calculate the open-circuit voltage Voc (in V).