Characterize the lvt N and P transistors for gm and rds. Range L from 45nm to 450nm (45,90,180,270,450) and W from 120nm to 2000nm (120, 240, 360, 480, 960, 1470, 1950) You should also get an Ids vs Vgs plot as part of the simulations. Use this to design a differential pair amplifier with a gain of 5. Submit an excel spreadsheet with your characterization results, and a screen shot of you amplifier schematics, and your simulation result running a sin wave (Use a vsin for input).