1. Silicon dioxide can sustain 10 MV/cm electric field. Calculate oxide thickness regimes for
(a) CMOS ICs where operating voltages are 1 to 5 V
(b) capillary electrophoresis (CE) microfluidic chips where 500 to 5000 V are used
2. Silicon is etched in plasma according to reaction Si (s) + 2Cl2 (g) → SiCl4 (g). What is the theoretical maximum etch rate of a 200 mm diameter silicon wafers when chlorine flow is 100 sccm (standard cubic centimetres per minute)?