Silicon Carbide (SiC) is a ceramic material with the so-called zinc blende crystal structure. It can be constructed from the FCC unit cell using a two-atom basis consisting of a Si atom at (0,0,0) and a C atom at (¼, ¼ , ¼).
(a) Calculate the percent ionicity of the Si-C bond. Does a dipole form from the Si-C bond?
(b) Determine the number of Si atoms and the number of C atoms contained in each SiC unit cell.
(c) The lattice parameter for SiC in the zinc blende form is 0.43596 nm. Determine the theoretical density of SiC.