N-type silicon sample has a uniform density Nd = 1017cm-3 of arsenic, and a P-type sample has Na = 1015cm-3. A third sample has both impurities present at the same time.
(a) Find the equilibrium minority carrier concentrations at 300 K in each sample.
(b) Find the conductivity of each sample at 300 K.
(c) Find the Fermi level in each material at 300 K with respect to either the conduction band edge (Ec) or the valence band edge (Ev).