melting point 5250c.it has small band gap and, Physics

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melting point 5250c.it has small band gap and

Melting point: 525⁰C.

It has small band gap and very high mobility around 70,000Cm²/V-Sec. It has much easier to prepare in single crystal from the Gallium arsenide. It is useful for infrared detectors, infrared filter material, and Hall Effect devices. Transistors, Tunnel diodes and laser diodes are also manufactured from indium Antimonite.

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Physics: melting point 5250c.it has small band gap and

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