The Hall-effect is used to determine the mobility of holes in a p-type silicon. Assume the bar resistivity is 20,000 ohm -cm the magnitude of Bz = 0.1 wb / m2, and d = w = 3 mm The measured value of the current and hall voltage are 100 mu A and 100 mV respectively. The hall coefficient RH is (m2 / coulombs).