Indium antimonide insb is a semiconductor with a narrow, Chemical Engineering

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Indium antimonide insb is a semiconductor with a narrow

Indium antimonide (InSb) is a semiconductor with a narrow band gap of 0.17eV and an intrinsic carrier concentration of 2×1016cm-3. The mobility of electrons in InSb is 78000 cm2/V⋅s and their effective mass is 0.014m0, while the holes have a mobility of 1000cm2/V⋅s and a mass of 0.43m0 (all at 300K).

What is the Fermi level with respect to mid-gap in intrinsic InSb?

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Chemical Engineering: Indium antimonide insb is a semiconductor with a narrow

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Chemical Engineering: Indium antimonide insb is a semiconductor with a narrow

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