In a particular IC design in which the standard channel length is 2µm, an NMOS device with W/L of 5 operating at 100µA is found to have an output resistance of 0.5MO, about 1/4 of that needed. What dimensional change can be made to solve the problem?
a) What is the new device length?
b) The new device width?
c)The new W/L ratio?
d) What is VA for the standard device in this IC? The new device?