1. Assume 100-keV boron implants on a 200-mm silicon wafer at a dose of 5 × 1014 ions/cm2. The projected range and project straggle are 0.31 and 0.07 µm, respectively. Calculate the peak concentration and the required ion-beam current for 1 min of implantation.
2. In a CMP process, the oxide removal rate and the removal rate of a layer underneath the oxide (called a stop layer) are 1r and 0.1r, respectively. To remove 1 µm of oxide and a 0.01-µm stop layer, the total removal time is 5.5 min. Find the oxide removal rate.