0.5-µm-thick
Al lines are formed on a flat surface. A layer of SiO2 (at least 1 pm thick) is then deposited over this A Degree Of Planarization (DOP) of 1 is de-sired but the actual DOP obtained was 0.4.
A CM etchbacic of the oxide is then done to obtain a net degree of planarization of 1.
If the CMP etch rate is 0.12 pm per minute, what is the minimum CMP etch time needed to obtain this net DO of 17 Assume no variations in thicknesses or CMP etch rates.