A square silicon chip (k = 150 W/m · K) is of width w = 5 mm on a side and of thickness t = 1 mm. The chip is mounted in a substrate such that its side and back surfaces are insulated, while the front surface is exposed to a coolant. If 4 W are being dissipated in circuits mounted to the back surface of the chip, what is the steady-state temperature difference between back and front surfaces?
