Problem
1. What is the difference in making inside versus outside spacers by anisotropic etching?
2. How much etch non-uniformity can native oxide cause in polysilicon RIE?
3. What must SF6 gas flow be in a DRIE reactor if the silicon etch rate is 10µm/min, wafer size is 150 mm and etchable area is 20%?
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.