Problem
1. How far will metallic impurities diffuse during thermal oxidation?
2. Which is faster, the diffusion of boron or phosphorus?
3. Boron-doped oxide film (200 nm thick, concentration 1021/cm3) is deposited on phosphorus-doped wafer (1015/cm3 phosphorus concentration). What is the junction depth doping after a 300 min, 1100 oC diffusion step?
4. What is the magnitude of emitter-push effect?
5. What is the magnitude of OED? Run some simulations to find which process parameters are important.
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.